Skin-Compatible Amorphous Oxide Thin-Film-Transistors with a Stress-Released Elastic Architecture

A highly reliable reverse-trapezoid-structured polydimethylsiloxane (PDMS) is demonstrated to achieve mechanically enhanced amorphous indium-gallium-zinc oxide (a-IGZO) thin-film-transistors (TFTs) for skin-compatible electronics. Finite element analysis (FEA) simulation reveals that the stress within a-IGZO TFTs can be efficiently reduced compared conventional substrates. Based on results, a photolithography process was employed implement reverse-trapezoid homogeneous structures using negative photoresist (NPR). Simply accessible NPR enabled high-resolution patterning and thus large-area scalable device architectures could obtained. The PDMS exhibited maximum saturation mobility of 6.06 cm2V−1s−1 under drain bias voltage 10 V with minimal strain stress. As result, proposed TFTs, including stress-released architecture, mechanical properties, showing variation 12% 15%, whereas planar showed over 10% even 1% failed operate beyond 2% strain.